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IPS090N03LG - Power-Transistor

Key Features

  • Fast switching MOSFET for SMPS.
  • Optimized technology for DC/DC converters.
  • Qualified according to JEDEC for target.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Type IPD090N03L G IPS090N03L G IPF090N03L G IPU090N03L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant IPD090N03L G Type • Avalanche rated • Pb-free plating; RoHS compliant IPF090N03L G 1) Product Summary V DS R DS(on),max ID 30 9 40 V mΩ A IPS090N03L G IPU090N03L G Package Marking PG-TO252-3-11 090N03L PG-TO252-3-23 090N03L PG-TO251-3-11 090N03L PG-TO251-3-21 090N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C