IPS110N12N3G Description
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket OptiMOSTM3Power-Transistor.
IPS110N12N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
- Except package TO251-3
- 1.1 K/W