IPS110N12N3G - MOSFET

Infineon

Key Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

IPS110N12N3G mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPS110N12N3G
Manufacturer	Infineon
File Size	573.47 KB
Description	MOSFET
Datasheet	IPS110N12N3G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.