Datasheet Summary
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor IPD_S110N12N3G
DataSheet
Rev.2.4 Final
Industrial&Multimarket
OptiMOSTM3Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen free according to IEC61249-2-21
- - Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G IPD110N12N3 G
IPD110N12N3 G IPS110N12N3 G
120 V 11 mΩ 75...
