Datasheet Summary
OptiMOS®2 Power-Transistor
Features
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
IPS12CN10L G IPP12CN10L G
100 V 12 mW 69 A
Package
PG-TO220-3
PG-TO251-3-11
Marking
12CN10L
12CN10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T...
