IPS12CN10L Description
OptiMOS®2 Power-Transistor.
IPS12CN10L Key Features
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- V DS=80 V, V GS=0 V, T j=125 °C
- R DS(on)
- V GS=10 V, I D=69 A