IPS70R900P7S
Description
Sheet 2 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current2) Application (Flyback) relevant avalanche current, single pulse3) MOSFET dv/dt ruggedness ID,pulse IAS dv/dt Gate source.
Key Features
- ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
- Excellentthermalbehavior
- IntegratedESDprotectiondiode
- Lowswitchinglosses(Eoss)
- Productvalidationacc.JEDECStandard Benefits
- Costpetitivetechnology
- Lowertemperature
- HighESDruggedness
- Enablesefficiencygainsathigherswitchingfrequencies
