IPT017N10NF2S
Features
- Optimized for a wide range of applications
- N‑Channel, normal level
- 100% avalanche tested
- Pb‑free lead plating; Ro HS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified for applications according to the test conditions in the relevant tests of JEDEC JESD22 and J‑STD‑020.
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key performance parameters
Value
Unit
1.75 mΩ
166 n C
130 n C
TOLL
Tab Tab
12 345 6 78
8 7 65 4 32
Drain Tab
Gate Pin 1
Source Pin 2-8
Part number IPT017N10NF2S
Package PG‑HSOF‑8
Marking 017N10NS
Related links ‑
Datasheet https://.infineon.
Revision 2.1 2025‑04‑29
Public
Strong IRFET™ 2 Power‑Transistor, 100 V
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