IPT017N10NF2S - 100V MOSFET

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1 Maximum ratings 3 T

Features

Optimized for a wide range of.

Infineon

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Datasheet Details

Part number	IPT017N10NF2S
Manufacturer	Infineon
File Size	915.23 KB
Description	100V MOSFET
Datasheet	IPT017N10NF2S Datasheet
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Public IPT017N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑Channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified for applications according to the test conditions in the relevant tests of JEDEC JESD22 and J‑STD‑020. Table 1 Parameter VDS RDS(on),max ID Qoss QG Key performance parameters Value Unit 100 V 1.75 mΩ 294 A 166 nC 130 nC TOLL Tab Tab 12 345 6 78 8 7 65 4 32 1 Drain Tab Gate Pin 1 Source Pin 2-8 Part number IPT017N10NF2S Package PG‑HSOF‑8 Marking 017N10NS Related links ‑ Datasheet https://www.infineon.com 1 Revision 2.

Published: May 6, 2025 |