IPT017N12NM6
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Optimizedforhighfrequencyswitching
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
1.7 mΩ
Qoss
266 n C
113 n C
Qrr(1000A/µs)
301 n C
Type/Ordering Code IPT017N12NM6
Package PG-HSOF-8
TOLL Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Marking 017N12N6
Related Links
- Final Data Sheet
Rev.2.0,2022-12-06
Opti MOSTM6Power-Transistor,120V...
