Datasheet Summary
Public
IPT025N15NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 150 V
Features
- N‑channel, normal level
- Very low on‑resistance RDS(on)
- Superior thermal resistance
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
- MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
2.5 mΩ
Qoss
310 nC
105 nC
Qrr (500A/μs)
184 nC
Type/Ordering Code IPT025N15NM6
Package PG‑HSOF‑8
TOLL tab
12 34 5 678
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