IPT026N12NM6
IPT026N12NM6 is MOSFET manufactured by Infineon.
Public
IPT026N12NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 120 V
Features
- N‑channel, normal level
- Very low on‑resistance RDS(on)
- Excellent gate charge x RDS(on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating
- 175°C operating temperature
- Optimized for high frequency switching
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
- MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
2.6 mΩ
Qoss
166 nC
QG (0V...10V)
70 nC
Qrr...
