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IPT026N12NM6 - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • High avalanche energy rating.
  • 175°C operating temperature.
  • Optimized for high frequency switching.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPT026N12NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 120 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 2.6 mΩ ID 224 A Qoss 166 nC QG (0V...