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IPT026N12NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 120 V
Features
• N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
2.6
mΩ
ID
224
A
Qoss
166
nC
QG (0V...
IPT026N12NM6 Datasheet
