Datasheet Summary
Public
IPT039N15N5 Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 150 V
Features
- N‑channel
- Very low on‑resistance RDS(on)
- Superior thermal resistance
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key Performance Parameters
Value
Unit
3.9 mΩ
219 nC
78 nC
TOLL tab
12 34 5 678
87654 321
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/Ordering Code IPT039N15N5
Package PG‑HSOF‑8
Marking 039N15N5
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