IPT60R028G7
IPT60R028G7 is 600V MOSFET manufactured by Infineon.
Public
IPT60R028G7 Final datasheet
MOSFET
600V Cool MOS™ G7 SJ Power Device
The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD Cool MOS™ technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3k W
Features
- C7 Gold gives best in class FOM RDS(on)- Eoss and RDS(on)- Qg.
- Suitable for hard and soft switching (PFC and high performance LLC)
- C7 Gold technology enables best in class RDS(on) in smallest footprint.
- TOLL package has inbuilt 4th pin Kelvin Source configuration and low parasitic source inductance (~1n H).
- TOLL package is MSL1 pliant, total Pb‑free and has easy visual inspection grooved leads.
- TOLL SMD package bined with lead free die attach process enables improved thermal performance Rth.
Benefits
- C7 Gold FOM RDS(on)- Qg is 15% better than previous C7 600V enabling faster switching leading to higher efficiency.
- Increased economies of scale by use in PFC and PWM topologies in the application
- C7 Gold can reach 28mΩ in in TOLL 115mm2 footprint, whereas previous BIC C7 600V was 40mΩ in 150mm2 D2PAK footprint.
- Reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.
- TOLL package is easy to use and has the highest quality standards.
- Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible.
Potential applications
PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. puting, Server, Tele, UPS and Solar.
Product validation
Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally remended.
Table 1 Key performance parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg.typ ID,pulse ID,continuous @ Tj<150°C...