IPT60R105CFD7
Features
- Ultra‑fast body diode
- Low gate charge
- Best‑in‑class reverse recovery charge (Qrr)
- Improved MOSFET reverse diode dv/dt and di F/dt ruggedness
- Lowest FOM RDS(on)- Qg and RDS(on)- Eoss
- Best‑in‑class RDS(on) in SMD and THD packages
Benefits
- Excellent hard mutation ruggedness
- Highest reliability for resonant topologies
- Highest efficiency with outstanding ease‑of‑use / performance tradeoff
- Enabling increased power density solutions
Potential applications
Suitable for Soft Switching topologies Optimized for phase‑shift full‑bridge (ZVS), LLC Applications
- Server, Tele, EV Charging
Product validation
Fully qualified according to JEDEC for Industrial Applications Please note: The source and sense source pins are not exchangeable. Their exchange might lead to malfunction. For paralleling 4pin MOSFET devices the placement of the gate resistor is generally remended to be on the Driver Source instead of the Gate.
Table 1 Key performance parameters
Parameter
Value
Un...
