Datasheet4U Logo Datasheet4U.com

IPTC014N10NM5 - 100V MOSFET

General Description

.

.

.

.

Key Features

  • N-channel.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPTC014N10NM5 MOSFET OptiMOSTM5Power-Transistor,100V Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 1.4 mΩ ID 365 A Qoss 213 nC QG 168 nC PG-HDSOP-16 16 9 16 9 1 8 8 1 Drain Pin 9-16, Tab Gate Pin 8 Source Pin 1-7 Type/OrderingCode IPTC014N10NM5 Package PG-HDSOP-16 Marking 14N10NM5 RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,100V IPTC014N10NM5 TableofContents Description . . . . . . . . . . . . . . .