IPTC025N15NM6
Description
1 Datasheet https://.infineon. 2 Revision 2.0 2024‑04‑17 Public OptiMOS™ 6 Power‑Transistor, 150 V IPTC025N15NM6 1 at TA=25 °C, unless otherwise specified Table 2 Parameter Symbol Continuous drain current 1) ID Pulsed drain current 3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage ID,pulse IAS EAS VGS Power dissipation Ptot Operating and storage temperature Tj, Tstg Values Unit Note/ Test Condition Min.
Key Features
- N‑channel, normal level
- Very low on‑resistance RDS(on)
- Superior - 100% avalanche tested
- Pb‑free lead plating; RoHS compliant
- Halogen‑free according to IEC61249‑2‑21
