IPTC068N20NM6 - 200V Power Transistor

Infineon

Datasheet Details

1 Maximum ratings 3 T

Public IPTC068N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200.

N‑channel, normal level.
Very low on‑resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
High avalanche energy rating.
175°C operating temperature.
Pb‑free lead plating; RoHS compliant.
Halogen‑free according to IEC61249‑2‑21.
MSL 1 classified according to J‑STD‑020.
100% avalanche tested Product validation Fully qualified according to JEDEC for Indust.