• Part: IPTC068N20NM6
  • Description: 200V Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 1.22 MB
Download IPTC068N20NM6 Datasheet PDF
Infineon
IPTC068N20NM6
Features - N‑channel, normal level - Very low on‑resistance RDS(on) - Excellent gate charge x RDS(on) product (FOM) - Very low reverse recovery charge (Qrr) - High avalanche energy rating - 175°C operating temperature - Pb‑free lead plating; Ro HS pliant - Halogen‑free according to IEC61249‑2‑21 - MSL 1 classified according to J‑STD‑020 - 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit RDS(on),max 6.8 mΩ Qoss 226 n C 71 n C Qrr (1000A/μs) 339 n C Part number IPTC068N20NM6 Package PG‑HDSOP‑16 TOLT 1 8 Drain Pin 9-16, Tab Gate Pin 8 Source Pin 1-7 Marking 068N20N6 Related links ‑ Datasheet https://.infineon....