IPTG025N10NM5 - MOSFET

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
100% avalanche tested.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
Ideal for high frequency switching and sync. rec. Product validation Fully qualified according to JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	IPTG025N10NM5
Manufacturer	Infineon
File Size	1.29 MB
Description	MOSFET
Datasheet	IPTG025N10NM5 Datasheet
Additional preview pages of the IPTG025N10NM5 datasheet.

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Full PDF Text Transcription

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IPTG025N10NM5 MOSFET OptiMOSTM5Power-Transistor,100V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.5 mΩ ID 206 A Qoss 123 nC QG 96 nC 1 8 PG-HSOG-8-1 TAB TAB 8 1 Drain TAB Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPTG025N10NM5 Package PG-HSOG-8-1 Marking 025N10N5 RelatedLinks - Final Data Sheet 1 Rev.2.

Published: Aug 10, 2023 |