IPTG029N13NM6 - MOSFET

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
100% avalanche tested.
175°C operating temperature.
Optimized for motor drives and battery powered.

Infineon

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Datasheet Details

Part number	IPTG029N13NM6
Manufacturer	Infineon
File Size	1.22 MB
Description	MOSFET
Datasheet	IPTG029N13NM6 Datasheet
Additional preview pages of the IPTG029N13NM6 datasheet.

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Full PDF Text Transcription

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IPTG029N13NM6 MOSFET OptiMOSTM6Power-Transistor,135V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 135 V RDS(on),max 2.9 mΩ ID 212 A Qoss 180 nC QG(0V..

Published: Apr 1, 2024 |