IPTG210N25NM3FD
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Fastdiode(FD)withreduced Qrr
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- Optimizedforhardmutationruggedness
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
21.0 mΩ
Qoss
144 n C
65 n C
1 8
PG-HSOG-8-1
TAB TAB
Drain TAB
Gate Pin 1
Source Pin 2-8
Type/Ordering Code IPTG210N25NM3FD
Package PG-HSOG-8-1
Marking 210N25NF
Related Links
- Final Data Sheet
Rev.2.0,2021-02-11
Opti MOSTM3Power-Transistor,250V
Tableof Contents
Description...
