IPTG210N25NM3FD - 250V MOSFET

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Fast diode (FD) with reduced Qrr.
175°C operating temperature.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
Optimized for hard commutation ruggedness Product validation Fully qualified according to JEDEC for Industrial.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPTG210N25NM3FD
Manufacturer	Infineon
File Size	1.32 MB
Description	250V MOSFET
Datasheet	IPTG210N25NM3FD Datasheet
Additional preview pages of the IPTG210N25NM3FD datasheet.

📁 Similar Datasheet

IPT2601 - USB Dedicated Fast-Charging Port Controller (FUMAN)
IPT2602 - USB fast charging port controller (ChipSourceTek)

Other Datasheets by Infineon

IPTG007N06NM5 - 60V MOSFET
IPTG014N10NM5 - 100V MOSFET
IPTG025N08NM5 - MOSFET
IPTG025N10NM5 - MOSFET
IPTG029N13NM6 - MOSFET
IPTG039N15NM5 - MOSFET
IPTG063N15NM5 - MOSFET
IPT004N03L - MOSFET

Full PDF Text Transcription

Click to expand full text

IPTG210N25NM3FD MOSFET OptiMOSTM3Power-Transistor,250V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Fastdiode(FD)withreducedQrr •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforhardcommutationruggedness Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 250 V RDS(on),max 21.0 mΩ ID 77 A Qoss 144 nC QG 65 nC 1 8 PG-HSOG-8-1 TAB TAB 8 1 Drain TAB Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPTG210N25NM3FD Package PG-HSOG-8-1 Marking 210N25NF RelatedLinks - Final Data Sheet 1 Rev.2.

Published: May 20, 2025 |