IPU33CN10NG Datasheet | Infineon

IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 34 27 V mΩ A - Ideal for high-frequency switching and synchronous rectification Type IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G Package Marking PG-TO263-3 35CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N PG-TO220-3 35CN10N PG-TO251-3 33CN10N Maximum ratings, at T j=25 °C, unless...