Infineon Technologies IPW50R280CE
MOSFET
FEATURES
● Extremely low losses due to very low FOM Rdson*Qg and Eoss● Very high commutation ruggedness
● Easy to use/drive
● Pb-free plating, Halogen free mold compound
● Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) PG-TO 247 PG-TO 220 tab Gate Pin 1 Drain Pin 2 Source Pin 3
APPLICATIONS
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV and Lighting. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.28 Ω ID 18.1 A Qg,typ 32.6 nC ID,pulse 42.9 A Eoss @ 400V 3.2 µJ Type / Ordering Code IPW50R280CE IPP50R280CE Package PG-TO 247 PG-TO 220 Marking 5R280CE Related Links see Appendix A Final Data Sheet 1 Rev. 2.2, 2016-06-13 500V CoolMOSª CE Power Transistor IPW50R280CE, IPP50R280CE Table of ContentsDESCRIPTION
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .