IPW60R040C7
Description
Sheet 3 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPW60R040C7 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single puls.
Key Features
- Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
- IncreasedMOSFETdv/dtruggednessto120V/ns
- IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- BestinclassRDS(on)/package
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
- IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application
- Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
- Enablinghighersystemefficiencybylowerswitchinglosses
- Increasedpowerdensitysolutionsduetosmallerpackages
- Suitableforapplicationssuchasserver,teleandsolar
