IPW60R041P6
Description
Sheet 3 Rev.2.0,2014-03-07 600VCoolMOS™P6PowerTransistor IPW60R041P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Pulsed drain current 2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation (Non FullPAK) TO-247 Storage temperature Operating junction temperature Mounting torque (Non FullPAK) TO-247 Continuous diode forward current Diode pulse.
Key Features
- IncreasedMOSFETdv/dtruggedness
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
