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IPW60R099CM8 - 600V Power Transistor

General Description

1 Maximum ratings 3 T

Key Features

  • Best‑In‑Class SJ Mosfet Performance.
  • Address broad hard and soft switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPW60R099CM8 Final datasheet MOSFET 600V CoolMOS™ CM8 Power Transistor Built on Infineon’s world‑class super‑junction MOSFET platform with an integrated fast body diode, making it suitable for a wide range of applications. It enables highest power density at lowest possible system cost with superior reliability. It is enhancing Infineon’s WBG offering and the successor of the 600 V CoolMOS™ 7 MOSFET family. Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .