Infineon Technologies IPW60R165CP
CoolMOS Power Transistor
FEATURES
● Lowest figure-of-merit RONxQg● Ultra low gate charge
● Extreme dv/dt rated
● High peak current capability
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPW60R165CP 650 V 0.165 Ω 39 nC PG-TO247-3-1 CoolMOS CP is specially designed for:
● Hard switching topologies, for Server and Telecom Type IPW60R165CP Package Ordering Code PG-TO247-3-1 SP000095483 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Symbol Conditions ID I D,pulse T C=25 °C T C=100 °C T C=25 °C E AS I D=7.9 A, V DD=50 V Avalanche energy, repetitive t 2),3) AR E AR I D=7.9 A, V DD=50 V Avalanche current, repetitive t 2),3) AR I AR MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque dv /dt V GS V DS=0...480 V static AC (f >1 Hz) P tot T C=25 °C T j, T stg M3 and M3.5 screws Rev.