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IQD016N08NM5SC - 80V MOSFET

Description

1 Maximum ratings 3 T

Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • Optimized design for double side cooling.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number IQD016N08NM5SC
Manufacturer Infineon
File Size 0.98 MB
Description 80V MOSFET
Datasheet download datasheet IQD016N08NM5SC Datasheet
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Public IQD016N08NM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss QG Key Performance Parameters Value Unit 80 V 1.57 mΩ 323 A 123 nC 106 nC Type/Ordering Code IQD016N08NM5SC Package PG‑WHSON‑8 PG‑WHSON‑8 5 67 8 tab 4 3 21 Drain Pin 5-8, tab Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking GA Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.
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