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IQD063N15NM5CGSC - 150V MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • Optimized design for double side cooling.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • Very low reverse recovery charge (Qrr) Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription for IQD063N15NM5CGSC (Reference)

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Public IQD063N15NM5CGSC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal r...

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el, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr) Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss QG Key Performance Parameters Value Unit 150 V 6.32 mΩ 151 A 136 nC 48 nC Type/Ordering Code IQD063N15NM5CGSC Package PG‑WHTFN‑9 PG‑WHTFN‑9 5 6 78 9 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 9 Source *1: Internal body diode Pin 1-4 Marking TA Re

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