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IQE004NE1LM7 - MOSFET

General Description

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Key Features

  • N-channel, logic level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Optimized for high performance SMPS, e. g. synchronous rectification Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IQE004NE1LM7 MOSFET OptiMOSTM7Power-Transistor,15V Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •OptimizedforhighperformanceSMPS,e.g.synchronousrectification Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 15 V RDS(on),max 0.45 mΩ ID 379 A Qoss 27 nC QG 29 nC PG-TSON-8 5678 43 2 1 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 Type/OrderingCode IQE004NE1LM7 Package PG-TSON-8 Marking 004E1L7 RelatedLinks - Final Data Sheet 1 Rev.2.