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IQE046N08LM5CGSC - 80V Power Transistor

Description

1 Maximum ratings 3 T

Features

  • Optimized for high performance SMPS, e. g. synchronous rectification.
  • N‑channel, logic level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription

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Public IQE046N08LM5CGSC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V Features • Optimized for high performance SMPS, e.g. synchronous rectification • N‑channel, logic level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 80 V RDS(on),max@10V 4.6 mΩ RDS(on),max@4.5V 5.9 mΩ ID 99 A Qoss 39 nC QG (0V...4.
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