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IQFH61N06NM5
MOSFET
OptiMOSTM5Power-Transistor,60V
Features
•OptimizedforLowVoltageDrivesapplications •OptimizedforBatteryPoweredapplications •OptimizedforSynchronousRectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
0.61
mΩ
ID
510
A
Qoss
202
nC
QG(0V..