Infineon Technologies IRF100P219
100V Power MOSFET
| Part No. | IRF100P219 |
|---|---|
| Datasheet | IRF100P219 Download |
| Manufacturer |  Infineon Technologies |
| Description | 100V Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Very low on‑resistance Rds(on)● Excellent gate charge x Rds(on)(FOM)
● Optimized Qrr
● 175°C operating temperature
● Product validation according to JEDEC standard
● Optimized for broadest availability from distribution partners Benefits
● Reduced conduction losses
● Ideal for high switching frequency
● Lower overshoot voltage
● Increased reliability versus 150°C rated parts
● Pb‑free lead plating; RoHS compliant
● Lead free, Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial
APPLICATIONS
Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V) Key performance parameters Value Unit 100 V 1.7 mΩ 203 A 213 nC 168 nC Type / Ordering code IRF100P219 Package PG‑TO247‑3 PG‑TO247‑3 1 2 3 Gate Pin 1 Drain Pin 2 Source Pin 3 Marking IRF100P219 Related links ‑ Datasheet 1 Revision 2.2 2025‑01‑09 Public StrongIRFET™ Power MOSFET, 100 V IRF100P219 Table of contentsDESCRIPTION
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