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IRF100P219 - 100V Power MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Very low on‑resistance Rds(on).
  • Excellent gate charge x Rds(on)(FOM).
  • Optimized Qrr.
  • 175°C operating temperature.
  • Product validation according to JEDEC standard.
  • Optimized for broadest availability from distribution partners Benefits.
  • Reduced conduction losses.
  • Ideal for high switching frequency.
  • Lower overshoot voltage.
  • Increased reliability versus 150°C rated parts.
  • Pb‑free lead plating; RoHS co.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IRF100P219 Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • Very low on‑resistance Rds(on) • Excellent gate charge x Rds(on)(FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners Benefits • Reduced conduction losses • Ideal for high switching frequency • Lower overshoot voltage • Increased reliability versus 150°C rated parts • Pb‑free lead plating; RoHS compliant • Lead free, Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V) Key performance parameters Value Unit 100 V 1.