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IRF40SC240 - MOSFET

General Description

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Key Features

  • Very low RDS(on).
  • High current carrying capability.
  • 175°C operating temperature.
  • Optimized for broadest availability from distribution partners Benefits.
  • Reduced conduction losses.
  • Increased power density.
  • Increased reliability versus 150°C rated parts.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 40 V.

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IRF40SC240 MOSFET StrongIRFETª Features •VerylowRDS(on) •Highcurrentcarryingcapability •175°Coperatingtemperature •Optimizedforbroadestavailabilityfromdistributionpartners Benefits •Reducedconductionlosses •Increasedpowerdensity •Increasedreliabilityversus150°Cratedparts •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),typ RDS(on),max 0.5 0.65 mΩ mΩ ID(SiliconLimited) 564 A ID(PackageLimited) 360 A QG(0V..10V) 366 nC Type/OrderingCode IRF40SC240 Package PG-TO263-7 Marking IRF40SC240 D²-PAK7pin Drain tab Gate Pin 1 Source Pin 2-7 RelatedLinks - Final Data Sheet 1 Rev.2.