Infineon Technologies IRF40SC240
MOSFET
FEATURES
● Very low RDS(on)● High current carrying capability
● 175°C operating temperature
● Optimized for broadest availability from distribution partners Benefits
● Reduced conduction losses
● Increased power density
● Increased reliability versus 150°C rated parts
● Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 40 V RDS(on),typ RDS(on),max 0.5 0.65 mΩ mΩ ID(Silicon Limited) 564 A ID(Package Limited) 360 A QG(0V..10V) 366 nC Type / Ordering Code IRF40SC240 Package PG-TO263-7 Marking IRF40SC240 D²-PAK 7pin Drain tab Gate Pin 1 Source Pin 2-7 Related Links - Final Data Sheet 1 Rev. 2.2, 2020-08-10 StrongIRFETª IRF40SC240 1 Maximum ratings at TA=25 °C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Continuous drain current ID Pulsed drain current1) Avalanche energy, single pulse2) Gate source voltage Power dissipation Operating and storage temperature ID,pulse EAS VGS Ptot Tj, Tstg Min. - -20 - -55 Values Typ.