Infineon Technologies IRF60B217
IR MOSFET
| Part No. | IRF60B217 |
|---|---|
| Datasheet | IRF60B217 Download |
| Manufacturer |  Infineon Technologies |
| Description | IR MOSFET |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff.(ER) Coss eff.(TR) Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) 150 ––– ––– S VDS = 10V, ID =36A ––– 44 66 ID = 36A ––– ––– 12 14 ––– ––– nC VDS VGS = = 30V 10V ––– 30 ––– ––– 8.3 ––– VDD = 30V ––– 37 ––– ID = 36A ns ––– 24 ––– RG= 2.7 ––– 20 ––– VGS = 10V ––– 2230 ––– VGS = 0V ––– 215 ––– VDS = 25V ––– 140 ––– pF ƒ = 1.0MHz, See Fig.7 ––– 230 ––– VGS = 0V, VDS = 0V to 48V ––– 295 ––– VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol IS ISM VSD dv/dt trr Parameter Continuous Source Current (Body Diode) Pulsed Source Curr...
