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IRF7342 - Power MOSFET

Download the IRF7342 datasheet PDF. This datasheet also covers the IRF7342PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF7342PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF7342 Power MOSFET International Rectifier
IRF7342D2 MOSFET & Schottky Diode International Rectifier
IRF7342D2PBF MOSFET & Schottky Diode International Rectifier
IRF7342PBF Power MOSFET International Rectifier
IRF7342QPBF Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
IRF7342PbF Power MOSFET
IRF7480M Power MOSFET
IRF7480MPbF Power MOSFET
IRF7480MTRPbF Power MOSFET
IRF7769L1 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
 Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast Switching  Lead-Free S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View IRF7342PbF HEXFET® Power MOSFET VDSS -55V RDS(on) max. ID 0.105 -3.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.