DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 IRF7342PbF G Gate D Drain S Source Base part number IRF7342PbF Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7342PbF ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ -10V ID @ TA = 70°C IDM Continuous Drain Current, VGS @ -10V Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear De rating Factor VGS VGSM Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp < 10µs EAS dv/dt Si...
Infineon Technologies
