Datasheet Details
| Part number | IRF7342 |
|---|---|
| Manufacturer | Infineon |
| File Size | 314.61 KB |
| Description | Power MOSFET |
| Datasheet | IRF7342 IRF7342PbF Datasheet (PDF) |
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Overview: Generation V Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View IRF7342PbF HEXFET® Power MOSFET VDSS -55V RDS(on) max. ID 0.105 -3.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRF7342 |
|---|---|
| Manufacturer | Infineon |
| File Size | 314.61 KB |
| Description | Power MOSFET |
| Datasheet | IRF7342 IRF7342PbF Datasheet (PDF) |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF7342 | Power MOSFET | International Rectifier |
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IRF7342D2 | MOSFET & Schottky Diode | International Rectifier |
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IRF7342D2PBF | MOSFET & Schottky Diode | International Rectifier |
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IRF7342PBF | Power MOSFET | International Rectifier |
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IRF7342QPBF | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRF7342PbF | Power MOSFET |
| IRF7480M | Power MOSFET |
| IRF7480MPbF | Power MOSFET |
| IRF7480MTRPbF | Power MOSFET |
| IRF7769L1 | Power MOSFET |
| IRF7769L1TRPbF | Power MOSFET |
| IRF7805PBF | Power MOSFET |
| IRF7805TRPbF-1 | Power MOSFET |
| IRF100P218 | MOSFET |
| IRF100P219 | 100V Power MOSFET |