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IRF7342 Datasheet Power MOSFET

Manufacturer: Infineon

Overview:  Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast Switching  Lead-Free S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View IRF7342PbF HEXFET® Power MOSFET VDSS -55V RDS(on) max. ID 0.105 -3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

IRF7342 Distributor