Datasheet Summary
- Generation V Technology
- Ultra Low On-Resistance
- Dual P Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating
- Fast Switching
- Lead-Free
S1
G1
S2
G2
D1
D1
D2
D2
Top View
IRF7342PbF
HEXFET® Power MOSFET
VDSS
-55V
RDS(on) max. ID
0.105 -3.4A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide...
