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IRF7769L1TRPbF Datasheet Power MOSFET

Manufacturer: Infineon

Overview: IRF7769L1TRPbF Applications RoHS Compliant, Halogen Free  Lead-Free (Qualified up to 260°C Reflow)  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Industrial Qualified DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS 100V min VGS ±20V max RDS(on) 2.8m@ 10V Qg tot Qgd Vgs(th) 200nC 110nC 2.

General Description

The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.

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