IRFL4105PBF Datasheet | Infineon

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application. G Gate IRFL4105Pb F HEXFET® Power MOSFET VDSS RDS(on) 55V 0.045 3.7A SOT-223 D Drain S Source Base Part Number IRFL4105Pb F Package Type SOT-223 Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFL4105Pb F Absolute Maximum Ratings Symbol Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V  Continuous Drain Current, VGS @ 10V  Pulsed Drain Current  Maximum Power Dissipation (PCB Mount)  PD @TA = 25°C Maximum Power Dissipation (PCB Mount)  Linear Derating Factor (PCB Mount)  VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Max. 5.2 3.7 3.0 30 2.1 1.0 8.3 ± 20 110 3.7 0.10 5.0 -55 to +...