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IRFL4105PBF Datasheet Power MOSFET

Manufacturer: Infineon

Overview:  Surface Mount  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  Fast Switching  Fully Avalanche Rated .

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

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