IRLR2705 - Power MOSFET

Infineon

Download the IRLR2705 datasheet PDF. This datasheet also covers the IRLR2705PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Key Features

Logic-Level Gate Drive.
Ultra Low On-Resistance.
Advanced Process Technology.
Fast Switching.
Fully Avalanche Rated.
Lead-Free.

📥 Download Datasheet

IRLR2705 power mosfet by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRLR2705PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRLR2705
Manufacturer	Infineon
File Size	1.26 MB
Description	Power MOSFET
Datasheet	IRLR2705 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
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IRLR2705	N-Channel MOSFET	INCHANGE
IRLR2705PBF	HEXFET Power MOSFET	International Rectifier
IRLR2703	HEXFET Power MOSFET	International Rectifier
IRLR2703	N-Channel MOSFET	INCHANGE

Other Datasheets by Infineon

Part Number	Description
IRLR2705PbF	Power MOSFET
IRLR3410	Power MOSFET
IRLR3410PbF	Power MOSFET
IRL100HS121	MOSFET
IRL3705NPbF	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IRLR2705PbF Features • Logic-Level Gate Drive • Ultra Low On-Resistance • Advanced Process Technology • Fast Switching • Fully Avalanche Rated • Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.