IRLR2705PbF Overview
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase,...
IRLR2705PbF Key Features
- Logic-Level Gate Drive
- Ultra Low On-Resistance
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
