IRLR2705PbF - Power MOSFET

Infineon

General Description

Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Key Features

Logic-Level Gate Drive.
Ultra Low On-Resistance.
Advanced Process Technology.
Fast Switching.
Fully Avalanche Rated.
Lead-Free.

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IRLR2705PbF power mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IRLR2705PbF
Manufacturer	Infineon
File Size	1.26 MB
Description	Power MOSFET
Datasheet	IRLR2705PbF Datasheet

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Full PDF Text Transcription (Reference)

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IRLR2705PbF Features • Logic-Level Gate Drive • Ultra Low On-Resistance • Advanced Process Technology • Fast Switching • Fully Avalanche Rated • Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.