IRLR2705PbF Datasheet | Infineon

Features - Logic-Level Gate Drive - Ultra Low On-Resistance - Advanced Process Technology - Fast Switching - Fully Avalanche Rated - Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET VDSS RDS(on) 55V 0.040 28A- G Gate D- Pak IRLR2705Pb F D Drain S Source Base part number IRLR2705Pb F Package Type D-Pak Standard Pack Form Tape and Reel Quantity 2000 Orderable Part Number IRLR2705TRPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance...