IRLR3410
Description
Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Key Features
- Logic Level Gate Drive
- Ultra Low On-Resistance
- Surface Mount (IRLR3410)
- Straight Lead (IRLU3410)
- Advances Process Technology
- Fast Switching
- Fully Avalanche Rated
