IRLR3410 Overview
Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor...
IRLR3410 Key Features
- Logic Level Gate Drive
- Ultra Low On-Resistance
- Surface Mount (IRLR3410)
- Straight Lead (IRLU3410)
- Advances Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
