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IRLR3410 - Power MOSFET

Download the IRLR3410 datasheet PDF. This datasheet also covers the IRLR3410PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Key Features

  • Logic Level Gate Drive.
  • Ultra Low On-Resistance.
  • Surface Mount (IRLR3410).
  • Straight Lead (IRLU3410).
  • Advances Process Technology.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3410PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRLR3410TRPBF N-Channel MOSFET VBsemi

Other Datasheets by Infineon

Part Number Description
IRLR3410PbF Power MOSFET
IRLR2705 Power MOSFET
IRLR2705PbF Power MOSFET
IRL100HS121 MOSFET
IRL3705NPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRLR3410PbF IRLU3410PbF Features • Logic Level Gate Drive • Ultra Low On-Resistance • Surface Mount (IRLR3410) • Straight Lead (IRLU3410) • Advances Process Technology • Fast Switching • Fully Avalanche Rated • Lead-Free Description Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications.