Datasheet Summary
Public
ISC031N08NM6SC Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 80 V
Features
- Dual‑side cooled package with lowest Junction‑top thermal resistance
- Optimized for high performance SMPS
- N‑channel, normal level
- Very low on‑resistance RDS(on)
- Superior thermal resistance
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC6129‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
RDS(on),max
3.1 mΩ
Qoss
73 nC
QG(0V...10V)
37 nC
Qrr (100A/μs)
34 nC
PG‑WSON‑8
8 7 6 5
1 2 3...