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ISC0802NLS - 100V MOSFET

General Description

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Key Features

  • Ideal for high-frequency switching.
  • Optimized for charger.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 3.6 mΩ ID 150 A Qoss 72 nC QG(0V. .4.5V) 29 nC PG-TDSON-8 8 7 6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISC0802NLS MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhigh-frequencyswitching •Optimizedforcharger •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 3.6 mΩ ID 150 A Qoss 72 nC QG(0V..4.5V) 29 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISC0802NLS Package PG-TDSON-8 Marking 0802NL RelatedLinks - Final Data Sheet 1 Rev.2.