Infineon Technologies ISC800P06LM
MOSFET
| Part No. | ISC800P06LM |
|---|---|
| Datasheet | ISC800P06LM Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● P-Channel● Very low on-resistance RDS(on) @ VGS=4.5 V
● 100% avalanche tested
● Logic Level
● Enhancement mode
● Pb-free lead plating; RoHS compliant
● Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial
APPLICATIONS
Table 1 Key Performance Parameters Parameter Value Unit VDS -60 V RDS(on),max 80 mΩ ID -19.6 A SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type / Ordering Code ISC800P06LM Package PG-TDSON-8 Marking 800P06LM Related Links - Final Data Sheet 1 Rev. 2.0, 2022-10-13 OptiMOSTM Power Transistor, -60 V ISC800P06LM Table of ContentsDESCRIPTION
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