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ISZ0602NLS - 80V MOSFET

General Description

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Key Features

  • Ideal for high-frequency switching.
  • Optimized for chargers.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 7.8 mΩ ID 64 A Qoss 23 nC QG(0V. .4.5V) 11 nC PG-TSDSON-8 FL 8 7.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISZ0602NLS MOSFET OptiMOSTM5Power-Transistor,80V Features •Idealforhigh-frequencyswitching •Optimizedforchargers •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 7.8 mΩ ID 64 A Qoss 23 nC QG(0V..4.5V) 11 nC PG-TSDSON-8FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISZ0602NLS Package PG-TSDSON-8 FL Marking 0602NL RelatedLinks - Final Data Sheet 1 Rev.2.