Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology.Providing embedded protective functions.2 IN
Voltage source
V Logic Voltage sensor
ESD
4 ST
Logic
Overvoltage protection
Current limit
Gate protection
+ Vbb 3
Charge pump Level shifter
Rectifier
Limit for unclamped ind.loads
Open load detection
OUT
Temperature
5
sensor
Load
Short circuit detection
GND
1
Signal GND
Features
- Overload protection.
- Current limitation.
- Short circuit protection.
- Thermal shutdown.
- Overvoltage protection (including load dump).
- Fast demagnetization of inductive loads.
- Reverse battery protection1).
- Undervoltage and overvoltage shutdown with
auto-restart and hysteresis.
- Open drain diagnostic output.
- Open load detection in ON-state.
- CMOS compatible input.
- Loss of ground and loss of Vbb.
ITS410E2 Datasheet
