K20N60 Datasheet | Infineon

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 s - Designed for: - Motor controls - Inverter - NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Very soft, fast recovery anti-parallel Emitter Controlled Diode - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1 for target applications - plete product spectrum and PSpice Models : http://.infineon./igbt/ PG-TO-247-3 Type SKW20N60 VCE(sat) Tj Marking Package 600V 20A 2.4V 150C K20N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  600V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC  600V, Tj  150C Power dissipation TC = 25C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Operating junction and storage temperature Symbol VCE IC ICpuls - IF IFpuls VGE t SC Ptot Ts Tj , Tstg Value Unit...