• Part: K30N60HS
  • Description: SKW30N60HS
  • Manufacturer: Infineon
  • Size: 344.59 KB
Download K30N60HS Datasheet PDF
K30N60HS page 2
Page 2
K30N60HS page 3
Page 3

Datasheet Summary

SKW30N60HS High Speed IGBT in NPT-technology - 30% lower Eoff pared to previous generation - Short circuit withstand time - 10 µs - Designed for operation above 30 kHz - NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution - High ruggedness, temperature stable behaviour - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1 for target applications - plete product spectrum and PSpice Models : http://.infineon./igbt/ PG-TO-247-3 Type Eoff Tj Marking Package SKW30N60HS 600V 30 480µJ 150°C K30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol...