Full PDF Text Transcription for K30N60HS (Reference)
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K30N60HS. For precise diagrams, and layout, please refer to the original PDF.
SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz...
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t circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.
K30N60HS Datasheet
