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K40T120 - IGBT

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.041Ω ( Typ. )@ VGS = 10V, ID = 26A.
  • Low gate charge ( Typ. 49nC).
  • Low Crss ( Typ. 66pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improve dv/dt capability.
  • RoHS compliant tm.

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Datasheet preview – K40T120

Datasheet Details

Part number K40T120
Manufacturer Infineon
File Size 537.02 KB
Description IGBT
Datasheet download datasheet K40T120 Datasheet
Additional preview pages of the K40T120 datasheet.

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Full PDF Text Transcription

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FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
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