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P2000DL45X168 Datasheet IGBT

Manufacturer: Infineon

Overview: Druckkontaktierter IGBT Press Pack IGBT Technische Information / technical information P2000DL45X168 Key Parameters IGBT VCES INOM ICRM Diode VRRM IF IFRM 4500 V 2000 A 4000 A 04(05T00C0=AV65 °C) 3570A 2000A (TC=55°C).

Key Features

  • Press Pack IGBT with integrated Freewheeling Diode.
  • Long term Short on Fail behavior.
  • High dynamic robustness.
  • High short-circuit capability.
  • Low VCEsat.
  • Trench IGBT 3 Typische Anwendungen.
  • Hochleistungsumrichter.
  • Mittelspannungsantriebe.
  • Modulare Multi- Level Umrichter MMC für HGÜ und Kompensationsanlagen.
  • DC Leistungsschalter Typical.

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