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PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs.

Key Features

  • include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, -10 3.84 MHz bandwidth 60 2620 MHz -20 2655 MHz 2690 MHz 50 -30 40 -40 30 Efficiency -50 ACP Up 20 ACP Low -60 28.

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Datasheet Details

Part number PTAC260302FC
Manufacturer Infineon
File Size 438.43 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTAC260302FC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, -10 3.