PTFA080551F

Manufacturer: Infineon

PTFA080551F datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA080551F Datasheet Details

Part number	PTFA080551F
Datasheet	PTFA080551F PTFA080551E Datasheet (PDF)
File Size	254.38 KB
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FETs

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

35 -40 -45
Average output power = 26 W
Gain = 18 dB
Efficiency = 44% Typical CW performance
Output power at P-1dB = 75 W
Gain = 17 dB
Efficiency = 67% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
ACP Low
50 -55 -60
65 -70

Brand Logo	Part Number	Description	Other Manufacturers
	PTFA080551F	Thermally-Enhanced High Power RF LDMOS FETs	Wolfspeed
	PTFA080551E	Thermally-Enhanced High Power RF LDMOS FETs	Wolfspeed

Part Number	Description
PTFA080551E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA082201E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA082201F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs