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PTFA080551F

PTFA080551F is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
PTFA080551F datasheet preview

PTFA080551F Details

Part number PTFA080551F
Datasheet PTFA080551F / PTFA080551E Datasheet PDF (Download)
File Size 254.38 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA080551F page 2 PTFA080551F page 3

PTFA080551F Overview

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

PTFA080551F Key Features

  • 35 -40 -45
  • Average output power = 26 W
  • Gain = 18 dB
  • Efficiency = 44% Typical CW performance
  • Output power at P-1dB = 75 W
  • Gain = 17 dB
  • Efficiency = 67% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • ACP Low
  • 50 -55 -60
  • 65 -70

Similar Datasheets

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