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PTFA080551F Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

Key Features

  • include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz Features.
  • -35 -40 -45 Broadband internal matching Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Effi.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs Wolfspeed
Wolfspeed Logo PTFA080551E Thermally-Enhanced High Power RF LDMOS FETs Wolfspeed

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PTFA080551F Distributor