Part PTFA080551F
Description Thermally-Enhanced High Power RF LDMOS FETs
Manufacturer Infineon
Size 254.38 KB
Infineon

PTFA080551F Overview

Key Specifications

Pins: 3
Max Operating Temp: 150 °C

Description

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges.

Key Features

  • 35 -40 -45 Broadband internal matching Typical EDGE performance
  • Average output power = 26 W
  • Gain = 18 dB
  • Efficiency = 44% Typical CW performance
  • Output power at P–1dB = 75 W
  • Gain = 17 dB
  • 50 -55 -60 ACP Up ALT Up

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.