Infineon Technologies PTFA192001F
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.| Part No. | PTFA192001F |
|---|---|
| Datasheet | PTFA192001F Download |
| Manufacturer |  Infineon Technologies |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30FEATURES
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● 25 Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 15.9 dB - Efficiency = 27% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB - Average output power = 48.5 dBm - Linear Gain = 15.9 dB - Efficiency = 34% - Intermodulation distortion = –37 dBc - Adjacent channel power = –40 dBc Typical CW p...
