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PTFA210301E

PTFA210301E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA210301E datasheet preview

PTFA210301E Details

Part number PTFA210301E
Datasheet PTFA210301E Datasheet PDF (Download)
File Size 188.43 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E page 2 PTFA210301E page 3

PTFA210301E Overview

The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available.

PTFA210301E Key Features

  • Thermally-enhanced packaging, Pb-free and RoHS-pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V
  • Average output power = 33 dBm
  • Linear Gain = 16.5 dB
  • Intermodulation distortion = -50 dBc
  • Adjacent channel power = -52 dBc
  • Typical CW performance, 2170 MHz, 28 V
  • Output power at P-1dB = 40 W
  • Efficiency = 59%

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