PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTFA210301E
Manufacturer	Infineon
File Size	188.43 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA210301E Datasheet
Additional preview pages of the PTFA210301E datasheet.

The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications.

It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Thermally-enhanced packaging, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion =.
50 dBc - Adjacent channel power =.
52 dBc.
Typical CW performance, 2170 MHz, 28 V - Output power at P.
1dB = 40 W - Efficiency = 59%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).

📁 Similar Datasheet

PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

Published: Feb 21, 2016 |