Datasheet Details
| Part number | PTFA210301E |
|---|---|
| Manufacturer | Infineon |
| File Size | 188.43 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA210301E Datasheet
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General Description
The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications.
It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.
Thermally-enhanced packaging provides the coolest operation available.
Key Features
- Thermally-enhanced packaging, Pb-free and RoHS-compliant.
- Broadband internal matching.
- Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion =.
- 50 dBc - Adjacent channel power =.
- 52 dBc.
- Typical CW performance, 2170 MHz, 28 V - Output power at P.
- 1dB = 40 W - Efficiency = 59%.
- Integrated ESD protection: Human Body Model, Class 2 (minimum).